Asir Intisar Khan
@asirkhan22
Postdoc, @UCBerkeley EECS | PhD, EE @Stanford | Data-storage and computing, Electronic materials
ID: 1324011678602686465
https://www.asir-i-khan.org/ 04-11-2020 15:32:49
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92 Followers
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Asir Intisar Khan's new paper on superlattice phase change memory is now on IEEE Xplore: doi.org/10.1109/LED.20…. This sheds light into the thermal switching mechanism and the lower memory resistance drift. The atomic-scale images are also pretty. IEEE Stanford Engineering standford
The new superlattice memory work is a follow-up to our Science Magazine study from Sep'21, which demonstrated record phase change memory performance on a flexible substrate: science.org/doi/10.1126/sc… Brent Grocholski Samuel K. Moore IEEE Spectrum Irina Lavryonova EE Times | Electronic Engineering Times Ars Technica
A nice short article in Forbes covering our energy-efficient phase-change memory breakthrough. Work led by Asir Intisar Khan and Alwin Daus, article by Jennifer. Research was done nano@stanford and Stanford Engineering. forbes.com/sites/jennifer…
Our work led by Asir Intisar Khan is a conference highlight @VLSI_2022: "First Demonstration of Ge2Sb2Te5-Based Superlattice Phase Change Memory". Catch Asir's talk T4-1 on Wed morning at 10:05am! Work funded by Semiconductor Research Corporation (SRC) and Stanford NMTRI. #VLSI22 vlsisymposium.org/media/
Great talks @VLSI_2022 today by current and past PopLab members: Asir Intisar Khan on superlattice PCM (Semiconductor Research Corporation (SRC)) and Kirby Maxey (Smithe) on #2dmaterials by MOCVD on 300 mm wafers Intel. #VLSI22
Our collaboration led by Arka Majumdar UW ECE is out Nature Nanotechnology: silicon photonic switches with phase-change materials and graphene heaters. Stanford work led by Asir Intisar Khan and Katie Neilson, with Juejun Hu of DMSE at MIT and friends Draper. See: nature.com/articles/s4156…
Our work led by Asir Intisar Khan is out in Nano Letters. For phase-change memory based on superlattices (here Ge2Sb2Te5/Sb2Te3), the "sharpness" of the van der Waals interfaces is very important. If they are disordered, the memory performance gets worse. doi.org/10.1021/acs.na…
Our work on fast #thermal #sensing with monolayer MoS2 on #flexible substrates is now published in Nano Letters! With record response time, more than 100 times faster than flexible thin-film metal sensors. Asir Intisar Khan Aravindh Kumar Ryan Grady Eric Pop pubs.acs.org/doi/10.1021/ac…
A well-illustrated, good write-up from friends Intel explaining how 3D-stacked transistors (a.k.a. nanosheets or nanoribbons) will continue Moore's Law to even higher transistor densities. Semiconductor Research Corporation (SRC) 3D-Stacked CMOS Takes Moore’s Law to New Heights spectrum.ieee.org/3d-cmos
Why does #phasechangememory "drift"? Xiangjin Wu and Asir Intisar Khan found that interfaces play a key role. More interfaces (as in a superlattice) means lower drift, up to a point. Optimized devices are good candidates for neuromorphic computing. Semiconductor Research Corporation (SRC) ieeexplore.ieee.org/document/98753…
Congrats, Eric (Eric Pop) for being elected an American Physical Society Fellow! Glad to be a part of your team! standford Stanford Engineering news.stanford.edu/report/?p=9259 via Stanford University
At #F23MRS, I will present our latest work on low-resistivity topological semimetals and their unconventional transport for scaled nanoelectronics. Looking forward to discussions and collaborations. Materials Research Society (MRS)
