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NVH4L080N120SC1 SiC MOSFET Data Silicon carbide MOSFETs offer considerable improvements in performance over standard power MOSFETs in terms of high voltage capability, low on resistance and current density. The NVH4L080N120SC1 from On Semiconductor is a great example with a

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NTBG015N065SC1 SiC MOSFET There are some really great silicon carbide MOSFETs available on the market these days. This one, the NTBG015N065SC1 from onsemi provides an amazing 650V VDS capability and an ON resistance down to 12miliOhms. This means that the device is ideal for

PSMN9R8-100YSF 100 V, 10.2 mΩ N-channel MOSFET Today's silicon MOSFETs provide very high levels of performance, like this PSMN9R8-100YSF. With very high maximum voltages and currents as well as low RDS(ON) resistance levels, these FETs off a great option for many designs. These

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BSS138 Small Signal MOSFET - key component data These N−Channel enhancement mode field effect transistors have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These devices are particularly suited for low voltage,

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HGTG10N120BN 1200V 35A IGBT - a great device The HGTG10N120BN is a Non-Punch Through (NPT) IGBT. It is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance

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