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SiCtech takes part in the EU H2020-ECSEL-2020-2-RIA project “YESvGaN (Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost)”, led by the German company Robert BOSCH GmbH, with 23 participants from countries around Europe.

The objective of the project “YESvGaN (Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost)” is the development of vertical GaN power MOSFETs for efficient processing powers higher than 10 kW.

The role of SiCtech at “YESvGaN” is the definition of the requirements, from the industrial pov, of the vertical GaN power devices as well as the development of a dedicated test bench and selected industrial prototypes for testing and qualification of the vertical GaN Mosfets.